PART |
Description |
Maker |
2SK3147S |
Silicon N Cannel MOSFET
|
Guangdong Kexin Industrial Co.,Ltd
|
SCH2807 |
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode
|
Sanyo Semicon Device
|
MCH5836 |
MOSFET : P-Channel Silicon MOSFET OSFET General-Purpose Switching Device Applications
|
Sanyo Semicon Device
|
C3M0075120K |
Silicon Carbide Power MOSFET C3M MOSFET Technology
|
Cree, Inc
|
CPH5855 |
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device
|
Sanyo Semicon Device
|
SCH281707 SCH2817 |
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device
|
Sanyo Semicon Device
|
MCH5837 |
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device
|
Sanyo Semicon Device
|
SCH2808 |
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device
|
Sanyo Semicon Device
|
ECH8901 |
PNP Epitaxial Planar Silicon Transistor P-Channel Silicon MOSFET
|
Sanyo Semicon Device
|
CTLM8110-M832D |
SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET AND LOW VF SILICON SCHOTTKY RECTIFIER
|
Central Semiconductor Corp
|
BF1005R BF1005W BF1005 |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gps=19dB, F=1.4dB Silicon N-Channel MOSFET Tetrode 硅N沟道MOSFET四极
|
Infineon Technologies A... INFINEON[Infineon Technologies AG]
|